MBR1025 chips for schottky diodes chip specification general description: schottky diode chips with mo-barrier for switch mode power rectifiers with the following features: * guard-ring for stress protection * extremely low forward voltage * 125 operation junction temperature * reverse avalanche behavior mechanical data: MBR1025passivated silicon chip dimension(mil): 108x128 mil thickness: 350 +- 20 m metallization: top ( anode ) : al (alag)* bottom ( cathode) : tiniag forward current (a): 10a reverse voltage (v): >27v type chip vf(v)@ 25 c vf(v)@ 25 c i r m @ v rmm size(mil) at if =10a at if =20a at 25 c MBR1025 108x128 <0,4v <0,5v 0,6ma * avaible in both variants expected value for recommended assembling with both side soldering typical device : pbyl1025, 19tq015
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